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SPP03N60S5HKSA1
- Modèle de produit:
- SPP03N60S5HKSA1
- La description:
- MOSFET N-CH 600V 3.2A TO-220AB
- État sans plomb / État RoHS:
- Sans plomb / conforme à la directive RoHS
- quantité disponible:
- 14266 Pieces
- Fiche technique:
- SPP03N60S5HKSA1.pdf
introduction
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Spécifications
| Vgs (th) (Max) @ Id: | 5.5V @ 135µA |
|---|---|
| La technologie: | MOSFET (Metal Oxide) |
| Package composant fournisseur: | PG-TO220-3-1 |
| Séries: | CoolMOS™ |
| Rds On (Max) @ Id, Vgs: | 1.4 Ohm @ 2A, 10V |
| Dissipation de puissance (max): | 38W (Tc) |
| Emballage: | Tube |
| Package / Boîte: | TO-220-3 |
| Autres noms: | SPP03N60S5 SPP03N60S5IN SPP03N60S5IN-ND SPP03N60S5X SPP03N60S5XTIN SPP03N60S5XTIN-ND |
| Température de fonctionnement: | -55°C ~ 150°C (TJ) |
| Type de montage: | Through Hole |
| Niveau de sensibilité à l'humidité (MSL): | 1 (Unlimited) |
| Référence fabricant: | SPP03N60S5HKSA1 |
| Capacité d'entrée (Ciss) (Max) @ Vds: | 420pF @ 25V |
| Charge de la porte (Qg) (Max) @ Vgs: | 16nC @ 10V |
| type de FET: | N-Channel |
| Fonction FET: | - |
| Description élargie: | N-Channel 600V 3.2A (Tc) 38W (Tc) Through Hole PG-TO220-3-1 |
| Tension drain-source (Vdss): | 600V |
| La description: | MOSFET N-CH 600V 3.2A TO-220AB |
| Courant - Drainage continu (Id) à 25 ° C: | 3.2A (Tc) |
| Email: | [email protected] |
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|---|---|---|---|---|
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SPP03N60S5XKSA1 | Infineon Technologies | LOW POWER_LEGACY | Enquête |
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SPP03N60C3HKSA1 | Infineon Technologies | MOSFET N-CH 650V 3.2A TO-220AB | Enquête |
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IRF8010SPBF | Infineon Technologies | MOSFET N-CH 100V 80A D2PAK | Enquête |
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NTB6411ANG | ON Semiconductor | MOSFET N-CH 100V 72A D2PAK | Enquête |
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IRF7401PBF | Infineon Technologies | MOSFET N-CH 20V 8.7A 8-SOIC | Enquête |
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IXFN64N60P | IXYS | MOSFET N-CH 600V 50A SOT-227 | Enquête |
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