Acheter NSBA123JDP6T5G avec BYCHPS
Acheter avec garantie
NSBA123JDP6T5G
- Modèle de produit:
- NSBA123JDP6T5G
- Fabricant:
- AMI Semiconductor / ON Semiconductor
- La description:
- TRANS 2PNP PREBIAS 0.408W SOT963
- État sans plomb / État RoHS:
- Sans plomb / conforme à la directive RoHS
- quantité disponible:
- 13333 Pieces
- Fiche technique:
- NSBA123JDP6T5G.pdf
introduction
BYCHIPS est le distributeur de bas pour NSBA123JDP6T5G, nous avons les stocks pour l'expédition immédiate et également disponible pour l'approvisionnement à long terme. S'il vous plaît envoyez-nous votre plan d'achat pour NSBA123JDP6T5G par email, nous vous donnerons un meilleur prix selon votre plan.
Spécifications
| Tension - Collecteur-émetteur disruptif (Max): | 50V |
|---|---|
| Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
| Transistor Type: | 2 PNP - Pre-Biased (Dual) |
| Package composant fournisseur: | SOT-963 |
| Séries: | - |
| Resistor - Emitter Base (R2) (Ohms): | 47k |
| Resistor - Base (R1) (Ohms): | 2.2k |
| Puissance - Max: | 408mW |
| Emballage: | Tape & Reel (TR) |
| Package / Boîte: | SOT-963 |
| Type de montage: | Surface Mount |
| Niveau de sensibilité à l'humidité (MSL): | 1 (Unlimited) |
| Délai de livraison standard du fabricant: | 4 Weeks |
| Référence fabricant: | NSBA123JDP6T5G |
| Fréquence - Transition: | - |
| Description élargie: | Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 408mW Surface Mount SOT-963 |
| La description: | TRANS 2PNP PREBIAS 0.408W SOT963 |
| Gain en courant DC (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
| Courant - Collecteur Cutoff (Max): | 500nA |
| Courant - Collecteur (Ic) (max): | 100mA |
| Email: | [email protected] |
pièces connexes NSBA123JDP6T5G
| image | Modèle de produit | Fabricant | La description | Vue |
|---|---|---|---|---|
 |
NSBA123JF3T5G | ON Semiconductor | TRANS PREBIAS PNP 254MW SOT1123 | Enquête |
 |
NSBA123JDXV6T1G | ON Semiconductor | TRANS 2PNP PREBIAS 0.5W SOT563 | Enquête |
|
NSBA123JDXV6T5G | ON Semiconductor | TRANS 2PNP PREBIAS 0.5W SOT563 | Enquête |
|
NSBA123EF3T5G | ON Semiconductor | TRANS PREBIAS DUAL PNP | Enquête |
|
NSBA123JDXV6T1 | ON Semiconductor | TRANS 2PNP PREBIAS 0.5W SOT563 | Enquête |
 |
NSBA123TDP6T5G | ON Semiconductor | TRANS 2PNP PREBIAS 0.408W SOT963 | Enquête |
|
NSBA123TF3T5G | ON Semiconductor | TRANS PREBIAS PNP 254MW SOT1123 | Enquête |
|
NSBA124EDXV6T1 | ON Semiconductor | TRANS 2PNP PREBIAS 0.5W SOT563 | Enquête |
|
NSBA123EDXV6T1G | ON Semiconductor | TRANS 2PNP PREBIAS 0.5W SOT563 | Enquête |
|
NSBA124XDXV6T1G | ON Semiconductor | TRANS 2PNP PREBIAS 0.5W SOT563 | Enquête |
|
NSBA124EF3T5G | ON Semiconductor | TRANS PREBIAS PNP 254MW SOT1123 | Enquête |
|
NSBA123EDXV6T1 | ON Semiconductor | TRANS 2PNP PREBIAS 0.5W SOT563 | Enquête |
|
NSBA124EDXV6T1G | ON Semiconductor | TRANS 2PNP PREBIAS 0.5W SOT563 | Enquête |
|
NSBA124EDXV6T5G | ON Semiconductor | TRANS 2PNP PREBIAS 0.5W SOT563 | Enquête |
Latest Nouvelles
- Xilinx Ships Industry's First 16nm All Programmable MPSoC Ahead of Schedule
- Xilinx and Samsung Jointly Enable the World's First 5G NR Commercial Deployment
- TI's Peter Balyta to head Education Technology division; Melendy Lovett to retire
- Janet Clark to join TI board of directors
- TI unveils DLP® 0.66-inch 4K ultra-high definition (UHD) chip, enabling more affordable large screen projection displays for home, business and education
- GCHQ Director calls for international cyber pact
- Embedded World: Arm introduces fourth security element to PSA
- Last chance: Nominate BrightSparks before 28 February
- Embedded World 2019: Get the full Electronics Weekly Guide
- "Xcell Journal" Special Edition: Xilinx Customers Shape a Brilliant Future
- Xilinx Launches Public Access of the SDSoC Development Environment to Expand Zynq SoC User Base to Broad Community of Systems and Software Engineers
- Texas Instruments names Haviv Ilan senior vice president of High Performance Analog