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ALD212908ASAL
- Modèle de produit:
- ALD212908ASAL
- Fabricant:
- Advanced Linear Devices, Inc.
- La description:
- MOSFET 2N-CH 10.6V 0.08A 8SOIC
- État sans plomb / État RoHS:
- Sans plomb / conforme à la directive RoHS
- quantité disponible:
- 19251 Pieces
- Fiche technique:
- ALD212908ASAL.pdf
introduction
BYCHIPS est le distributeur de bas pour ALD212908ASAL, nous avons les stocks pour l'expédition immédiate et également disponible pour l'approvisionnement à long terme. S'il vous plaît envoyez-nous votre plan d'achat pour ALD212908ASAL par email, nous vous donnerons un meilleur prix selon votre plan.
Spécifications
| Vgs (th) (Max) @ Id: | 20mV @ 10µA |
|---|---|
| Package composant fournisseur: | 8-SOIC |
| Séries: | EPAD®, Zero Threshold™ |
| Rds On (Max) @ Id, Vgs: | - |
| Puissance - Max: | 500mW |
| Emballage: | Tube |
| Package / Boîte: | 8-SOIC (0.154", 3.90mm Width) |
| Température de fonctionnement: | 0°C ~ 70°C (TJ) |
| Type de montage: | Surface Mount |
| Niveau de sensibilité à l'humidité (MSL): | 1 (Unlimited) |
| Délai de livraison standard du fabricant: | 10 Weeks |
| Référence fabricant: | ALD212908ASAL |
| Capacité d'entrée (Ciss) (Max) @ Vds: | - |
| Charge de la porte (Qg) (Max) @ Vgs: | - |
| type de FET: | 2 N-Channel (Dual) Matched Pair |
| Fonction FET: | Logic Level Gate |
| Description élargie: | Mosfet Array 2 N-Channel (Dual) Matched Pair 10.6V 80mA 500mW Surface Mount 8-SOIC |
| Tension drain-source (Vdss): | 10.6V |
| La description: | MOSFET 2N-CH 10.6V 0.08A 8SOIC |
| Courant - Drainage continu (Id) à 25 ° C: | 80mA |
| Email: | [email protected] |
pièces connexes ALD212908ASAL
| image | Modèle de produit | Fabricant | La description | Vue |
|---|---|---|---|---|
 |
ALD212904PAL | Advanced Linear Devices Inc. | MOSFET 2N-CH 10.6V 0.08A 8DIP | Enquête |
 |
ALD212900ASAL | Advanced Linear Devices Inc. | MOSFET 2N-CH 10.6V 0.08A 8SOIC | Enquête |
|
ALD212908APAL | Advanced Linear Devices Inc. | MOSFET 2N-CH 10.6V 0.08A 8DIP | Enquête |
|
ALD212908PAL | Advanced Linear Devices Inc. | MOSFET 2N-CH 10.6V 0.08A 8DIP | Enquête |
|
ALD212900PAL | Advanced Linear Devices Inc. | MOSFET 2N-CH 10.6V 0.08A 8DIP | Enquête |
|
ALD212908SAL | Advanced Linear Devices Inc. | MOSFET 2N-CH 10.6V 0.08A 8SOIC | Enquête |
|
ALD212900SAL | Advanced Linear Devices Inc. | MOSFET 2N-CH 10.6V 0.08A 8SOIC | Enquête |
|
ALD212904SAL | Advanced Linear Devices Inc. | MOSFET 2N-CH 10.6V 0.08A 8SOIC | Enquête |
|
ALD212902SAL | Advanced Linear Devices Inc. | MOSFET 2N-CH 10.6V 0.08A 8SOIC | Enquête |
|
ALD212902PAL | Advanced Linear Devices Inc. | MOSFET 2N-CH 10.6V 0.08A 8DIP | Enquête |
|
ALD212900APAL | Advanced Linear Devices Inc. | MOSFET 2N-CH 10.6V 0.08A 8DIP | Enquête |
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